< igbt m odules > cm100tx- 24s 1 high power switching use insulated type collector current i c ............. ? ...... ... .......... . .. .? 1 0 0 a collector - emitter voltage v ces ....... ..... .... . .... .? 1 2 0 0 v maximum junction temperature t jmax . ........... .. 1 7 5 c flat base type copper base plate (non - plating) tin plating pin terminals rohs directive compliant s ix pack ( 3 inverter ) recognized under ul1557, file e323585 application ac motor control , motion/servo control , power supply , etc. outlin e drawing & internal connection dimension in mm terminal section a internal connection g w p ( 9 ) w( 21 ~ 23 ) ew p (1 0 ) p1( 16 ~ 18 ) ntc th1 ( 19 ) th2 ( 20 ) g w n ( 1 1 ) ew n ( 1 2 ) g v p ( 5 ) v( 24 ~ 26 ) e v p ( 6 ) g v p ( 7 ) e v p ( 8 ) g u p (1) u( 27 ~ 29 ) e u p ( 2 ) g un ( 3 ) e un ( 4 ) n1( 1 3~ 1 5) p( 30 ~ 32 ) n( 33 ~ 35 ) 1
< igbt modules > cm100tx - 24s1 high power switching use insulated type maximum ratings (t j =25 c, unless otherwise specified ) inverter part igbt/ diode symbol item conditions rating unit v ces collector - emitter voltage g - e s hort - circuited 1200 v v ges gate - emitter voltage c - e s hort - circuited 20 v i c collector current dc, t c =1 07 c (note 2, 4) 100 a i crm pulse, repetitive (note3) 200 p tot total power dissipat ion t c =25 c (note 2, 4) 62 5 w i e (note1) emitter current dc (note2) 10 0 a i e r m (note1) pulse, repetitive (note3) 200 module symbol item conditions rating unit v iso l isolation voltage t erminal s to base plate, rms, f=60 hz, ac 1 min 40 00 v t j max maximum j unction temperature instantaneous event (overload) 1 7 5 c t cmax maximum case temperature (note 4 ) 125 t j op operating junction temperature continuous operation (under switching) -40 ~ +150 c t stg storage temperature - - 40 ~ +125 e lectrical characteristics ( t j =25 c, unless otherwise specified ) inverter part igbt/ diode symbol item conditions limits unit min. typ. max. i ces collector - emitter cut - off current v ce =v ces , g - e s hort - circuited - - 1 .0 ma i ges gate - emitter leakag e current v ge =v ges , c - e s hort - circuited - - 0.5 a , inductive load - - 600 t f f all time - - 300 v ec (note1) ( terminal ) emitter-collector voltage i e = 10 0 a , g - e s hort - circuited, t j =25 c - 2.60 3.40 v refer to the figure of test circuit t j =125 c - 2.16 - (note 5 ) t j =15 0 c - 2.10 - v ec (note1) (chip) i e = 10 0 a , t j =25 c - 2.5 0 3.30 v g - e s hort - circuited, t j =125 c - 2.06 - (note 5 ) t j =150 c - 2.00 - t rr (note1) reverse recovery time v cc = 600 v, i e = 10 0 a , v ge = 15 v , - - 300 ns q rr (note1) reverse recovery charge r g = 6. 2 c , t j =1 50 c, - 9.7 - e rr (note1) reverse recovery energy per pulse inductive load - 9. 7 - mj r cc'+ee' internal lead resistance main terminals - chip, per switch, - - 2.2 m t c =25 c (note 4 ) r g internal gate resistance per switch - 0 - publication date : december 2013 2
< igbt modules > cm100tx - 24s1 high power switching use insulated type electrical characteristics ( cont . ; t j =25 c, unless otherwise specified ) ntc thermistor pa rt symbol item conditions limits unit min. typ. max. r 25 zero - power resistance t c =25 c (note 4) 4.85 5.00 5.15 k r/r deviation of resistance r 100 =493 , t c =100 c (note 4 ) -7.3 - +7.8 % b (25/50) b-constant approximate by equation (note 6 ) - 3375 - k p 25 power dissipation t c =25 c (note 4 ) - - 10 mw thermal resistance characteristics symbol item conditions limits unit min. typ. max. r th(j - c)q thermal resistance junction to case, per inverter igbt (note 4 ) - - 0.24 k/w r th(j - c) d junction to case, per inverter diode (note 4 ) - - 0.37 r th(c - s ) contact thermal resistance case to heat sink, per 1 module , - 15 - k/kw thermal grease a pplied (note 4, 7 ) mechanical characteristics symbol item conditions limits unit min. typ. max. m s mounting torque mounting to heat sink m 5 screw 2.5 3.0 3.5 nm m mass - - 330 - g d s creepage distance terminal to terminal 16.3 - - mm terminal to base plate 19.1 - - d a clearance terminal to terminal 10.3 - - mm te rminal to base plate 15.3 - - e c flatness of base plate on the centerline x, y (note 8 ) 0 - +100 502550 25 5025 11 ? = , r 25 : resistance at absolute temperature t 25 [k ]; t 25 =25 [c]+273.15=298.15 [k] r 50 : resistance at absolute temperature t 50 [k ]; t 50 =50 [c]+273.15=323.15 [k] 7. typical value is measured by using thermally conductive grease of =0.9 w/(m k). 8. the base plate (mounting side) flatness measurement points (x, y) are as follows of the following figure. y x +: convex - : concave +: convex - : concave mounting s ide mounting s id e mounting s ide 9. use the following screws when mounting the printed circuit board (pcb) on the stand offs. " 2.610 or 2.612 b1 tapping screw" the length of the screw depends on the thickness (t1.6~t2.0) of the pcb. publication date : december 2013 3
< igbt modules > cm100tx - 24s1 high power switching use insulated type recommended operating conditions symbol item conditions limits unit min. typ. max. v cc (dc) supply voltage applied across p-n/p1- n1 terminals - 600 850 v v geon gate (-emitter drive) voltage applied across 13.5 15.0 16.5 v g *p- e*p/g*n -e*n(*=u, v, w) terminals r g external gate resistance per switch 6.2 - 62 chip location (top view) dimension in mm , tolerance: 1 mm tr*p/tr*n: igbt, di*p/di*n: diode (*=u/v/w), th: ntc thermistor test circuit and waveforms v cc - v ge +v ge - v ge + v c e v g e 0 i e i c p n * g*p e*p g*n e*n l oad r g *: u, v, w n1 p1 t t f t r t d(on) i c 1 0% 9 0 % 9 0 % v ge 0 v 0 a 0 t d(off) t i rr q rr = 0.5 i rr t rr 0.5 i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr characteristics test waveform 0. 1 i c m i c m v c c v ce i c t 0 t i 0. 1 v c c 0.1 v c c v c c i c m v ce i c t 0 0.02i c m t i i em v ec i e t 0 v t i t v cc 0 a igbt turn - on switching energy igbt turn - off switching ener gy diode reverse recovery energy turn - on / turn- off switching energy and reverse recovery energy test waveforms ( integral time instruction drawing ) publication date : december 2013 4
< igbt modules > cm100tx - 24s1 high power switching use insulated type test circuit v short - circuited 30~32 27~29 33~35 i c 1 2 3 4 v g e =15v 16~18 13~15 v short - circuited 30~32 2 4 ~2 6 33~35 i c 5 6 7 8 v g e =15v 16~18 13~15 v short - circuited 30~32 2 1 ~2 3 33~35 i c 9 10 11 12 v g e =15v 16~18 13~15 gate - emitter short - circuited gvp - evp gvn - evn, gwp - ewp, gwn - ewn gate - emitter short - circuited gup - eup, gun - eun, gwp - e w p , gwn - e wn gate - emitter short - circuited gu p - eup, gun - eun, gvp - evp, gvn - evn up / un igbt vp / vn igbt wp / wn igbt v short - circuited 30~32 27~29 33~35 i e 1 2 3 4 16~18 13~15 short - circuited v short - circuited 30~32 2 4 ~2 5 33~35 i e 5 6 7 8 16~18 13~15 short - circuited v short - circuited 30~32 2 1 ~2 3 33~35 i e 9 10 11 12 16~18 13~15 short - circuited v short - circuited 30~32 27~29 33~35 i e 1 2 3 4 16~18 13~15 short - circuited v short - circuited 30~32 2 4 ~2 6 33~35 i e 5 6 7 8 16~18 13~15 short - circuited v short - circuited 30~32 2 1 ~2 3 33~35 i e 9 10 11 12 16~18 13~15 short - circuited , , , , , , , , v ec characteristics test circuit publication date : december 2013 5
< igbt modules > cm100tx - 24s1 high power switching use insulated type performance curves inverter part output characteristics (typical) collector - emitter saturation voltage characteristics (typical) t j =25 c (chip) v ge =15 v (chip) collector current i c (a) 0 50 100 150 200 0 2 4 6 8 10 collector - emitter saturation voltage v ce sat (v) 0 0.5 1 1.5 2 2.5 3 3.5 0 50 100 150 200 collector - emitter voltage v ce (v) collector current i c (a) collector - emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typ ical) t j =25 c (chip) g - e short - circuited (chip) collector - emitter saturation voltage v ce sat (v) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 emitter current i e (a) 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 g ate - emitter voltage v ge (v) emitter - collector voltage v ec (v) i c = 200 a i c = 100 a i c = 40 a t j =1 25 c t j =25 c t j =15 0 c v ge =2 0 v 12 v 11 v 10 v 9 v 15 v t j =150 c t j =125 c t j =25 c publication date : december 2013 6
< igbt modules > cm100tx - 24s1 high power switching use insulated type performance curves inverter part half - bri dge switching characteristics (typical) half - bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =6.2 , inductive load -------------- -: t j =150 c, - - - - -: t j =125 c v cc =600 v, v ge =15 v, i c =10 0 a, inductive load -------------- -: t j =150 c, - - - - -: t j =125 c switching time (ns) 1 10 100 1000 10 100 1000 switching time (ns) 10 100 1000 1 10 100 collector current i c (a) external gate resistance r g ( half - bridge switching characteristics (typical) half - bridge switching characteristics (typical) v cc =600 v, v ge = 15 v, r g = 6.2 v cc =600 v, v ge = 15 v, i c /i e =1 0 0 a, inductive load, per pulse -------------- -: t j =150 c, - - - - -: t j =125 c switching energy (mj) 0.1 1 10 10 100 1000 1 10 100 reverse re covery energy (mj) switching energy (mj) reverse recovery energy (mj) 1 10 100 1 10 100 collector current i c (a) emitter current i e (a) external gate resistance r g ( e on e off e rr e on e off e rr t r t f t d(o ff ) t d(o n ) t d(o n ) t r t f t d(o ff ) publication date : december 2013 7
< igbt modules > cm100tx - 24s1 high power switching use insulated type performance curves inverter part capacitance characteristics (typical) free wheeli ng diode reverse recovery characteristics (typical) g-e short-circuited, t j =25 c v cc =600 v, v ge =15 v, r g =6.2 , inductive load -------------- -: t j =150 c, - - - - -: t j =125 c capacitance (nf) 0.01 0.1 1 10 100 0.1 1 10 100 t rr (ns), i rr (a) 10 100 1000 10 100 1000 collector - emitter volta ge v ce (v) emitter current i e (a) g ate ch arge characteristics (typical) transient thermal impedance characteristics (maximum) v cc =600 v, i c =100 a, t j =25 c single pulse, t c =25 c r th(j - c)q =0.24 k/w , r th(j - c) d =0.37 k/w gate - emitter voltage v ge (v) 0 5 10 15 20 0 50 100 150 200 250 300 normalized transient thermal resistance z th(j - c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 g ate ch arge q g (nc) time (s) t rr i rr c ies c oes c res publication date : december 2013 8
< igbt modules > cm100tx - 24s1 high power switching use insulated type performance curves ntc thermistor part temperature characteristics (typical) resistance r (k 0.1 1 10 100 -50 -25 0 25 50 75 100 125 temperature t ( c) publication date : december 2013 9
< igbt modules > cm100tx - 24s1 high power switching use insulated type keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may oc cur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circu its, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page ( www.mitsubishielectric .com /s emiconductor s/). ? when using any or all of the information contained in these materials, including product data, diagra ms, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from the information containedherein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of jap an and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein. ? 2013 mitsubishi electric corporation. all rights reserved. publication date : december 2013 10
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